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APM3011NU
N-Channel Enhancement Mode MOSFET
Features
*
30V/40A , RDS(ON)=9m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V
Pin Description
G
D S
* * * *
Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
Top View of TO-252
(2) D1
Applications
*
Power Management in Desktop Computer or DC/DC Converters
S1 (3) (1) G1
N-Channel MOSFET
Ordering and Marking Information
A PM 3011N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube T R : T ape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e
A PM 3011N U :
A PM 3011N XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw
APM3011NU
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C Rating 30 20 150 -55 to 150 100 65 40 22 50 20 2.5 W C/W V C C Unit
Common Ratings (TA=25C Unless Otherwise Noted)
Mounted on Large Heat Sink IDP ID PD RJC 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case
2
A A
Mounted on PCB of 1in pad area IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 100 65 10 6 2.5 1 50 100 65 7 4 1.5 0.5 75 W C/W W C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
2
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APM3011NU
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM3011NU Min. Typ. Max.
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy
ID=20A, VDD=20V 30
100
mJ
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A IDSS VGS(th) IGSS RDS(ON)
a
V 1 30 A V nA m
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VDS=24V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A , VGS=0V 9 13 1 1.5
2 100 11 17
Diode Characteristics a VSD Diode Forward Voltage
b IS b
0.9
1.3 20
V A
Diode continuous forward current TC=25C 1560 345 245 10 VDD=15V, RL=15, IDS=1A, VGEN=4.5V, RG=6
b
Dynamic Characteristics Ciss Input Capacitance Coss Crss td(ON) Tr td(OFF) Tf Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VGS=0V, VDS=15V, Frequency=1.0MHz
pF
20 25 50 20 ns
15 35 15
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge
17.8 VDS=15V, VGS=4.5V, IDS=20A 4.6 10
24 nC
Notes: a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
3
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APM3011NU
Typical Characteristics
Power Dissipation
60 50
Drain Current
50
40
40
ID - Drain Current (A)
0 20 40 60 80 100 120 140 160 180
Ptot - Power (W)
30
30
20
20
10
10
0
0
0
20
40
60
80 100 120 140 160 180
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistance
300 100 2 1
Thermal Transient Impedance
ID - Drain Current (A)
it im )L (on s Rd
Duty = 0.5 0.2
10ms 100ms
10
1s
0.1
0.05 0.02 0.01
0.1
DC
1
0.01
Single Pulse
0.1 0.1
Tc=25 C
o
1
10
70
1E-3 1E-4
Mounted on 1in pad o RJA :50 C/W
2
1E-3
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM3011NU
Typical Characteristics (Cont.)
Output Characteristics
40 VGS=5,6,7,8,9,10V 35 30 4V 24
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
20
ID - Drain Current (A)
16
25 20 15 10 5 0 3V 3.5V
VGS=4.5V
12 VGS=10V 8
4
2.5V 0 2 4 6 8 10 0 0 5 10 15 20 25 30 35 40
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
40 36 32 1.6
Gate Threshold Voltage
IDS =250A
Normalized Threshold Vlotage
1.4 1.2 1.0 0.8 0.6 0.4
ID - Drain Current (A)
28 24 20 16 12 8 4 0 0 1
Tj=125 C Tj=-55 C
o
o
Tj=25 C
o
2
3
4
5
0.2 -50 -25
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM3011NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8 VGS = 10V 1.6 IDS = 20A 10 40
Source-Drain Diode Forward
Normalized On Resistance
IS - Source Current (A)
1.4 1.2 1.0 0.8 0.6 RON@Tj=25 C: 9m 0.4 -50 -25 0 25 50 75 100 125 150
o
Tj=150 C
o
1
Tj=25 C
o
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (C)
VSD - Source-Drain Voltage (V)
Capacitance
2500 Frequency=1MHz 10 V 9
DS
Gate Charge
=15 V
ID = 2 0 A
VGS - Gate-source Voltage (V)
25
2000
8 7 6 5 4 3 2 1
C - Capacitance (pF)
Ciss 1500
1000
500 Crss 0 0 5 10
Coss
15
20
0
0
5
10
15
20
25
30
35
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
6
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APM3011NU
Avalanche Test Circuit and Waveforms
V DS L DUT
tp
V D SX( SU S) V DS
IA S
RG V DD
V DD
tp
IL 0.0 1
EA S
tA V
Switching Time Test Circuit and Waveforms
V DS RD DUT V RG V DD
10%
tp
V DS
90%
GS
V GS t d (on) t r t d (off) t f
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM3011NU
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H L1 L b e1 C A1
Dim A A1 b b2 C C1 D E e1 H L L1 L2
Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32
8
Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80
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Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
APM3011NU
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 25 C to Peak
T im e
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw
APM3011NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
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APM3011NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 330 3
B 100 2 D 1.5 +0.1
C 13 0. 5 D1
J 2 0.5 Po
T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao
W 16+ 0.3 - 0.1 Bo
P 8 0.1 Ko 2.5 0.1
E 1.75 0.1 t 0.30.05
TO-252
F 7.5 0.1
1.5 0.25 4.0 0.1
6.8 0.1 10.4 0.1
(mm)
Cover Tape Dimensions
Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005
11
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